IRG7PH42U-EP Features
* Low VCE (ON) trench IGBT technology
* Low switching losses
* Maximum junction temperature 175 °C
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) temperature co-efficient
* Tight parameter distribution
* Lead -Fre
IRG7PH42UPBF_InternationalRectifier.pdf
Datasheet Details
IRG7PH42U-EP, IRG7PH42UPBF
International Rectifier
293.06 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRG7PH42U-EP, IRG7PH42UPBF.
Please refer to the document for exact specifications by model.
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IRG7PH42U-EP Distributor
