IRG7PH46UPbF Features
* Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Fre
IRG7PH46U-EP_InternationalRectifier.pdf
Datasheet Details
IRG7PH46UPbF, IRG7PH46U-EP
International Rectifier
413.79 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRG7PH46UPbF, IRG7PH46U-EP.
Please refer to the document for exact specifications by model.
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IRG7PH46UPbF Distributor
