IRG7PSH50UDPbF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* Low VCE (ON) trench IGBT technology

* Low switching losses C

* Square RBSOA

* 100% of the parts tested for ILM

* Positive VCE (ON) temperature co-efficient

* Ultra fast soft recovery co-pak diode G

* Tight parameter distribution

IRG7PSH50UDPbF

International Rectifier

380.42 KB

Insulated gate bipolar transistor.

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