Full PDF Text Transcription for IRG7PSH50UDPbF (Reference)
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IRG7PSH50UDPbF. For precise diagrams, and layout, please refer to the original PDF.
PD - 97548 IRG7PSH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) trench IGBT technology • Low switching losses C • S...
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res • Low VCE (ON) trench IGBT technology • Low switching losses C • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Ultra fast soft recovery co-pak diode G • Tight parameter distribution • Lead-Free Benefits E n-channel • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation Applications • U.P.S. • Welding • Solar Inverter • Induction Heating G Gate VCES = 1200V I NOMINAL = 50A
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IRG7PSH50UDPbF Datasheet
