IRG7PSH73K10PbF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* Low VCE (ON) Trench IGBT Technology

* Low Switching Losses

* Maximum Junction Temperature 175 °C

* 10 μS short Circuit SOA

* Square RBSOA

* 100% of The Parts Tested for ILM

* Positive VCE (ON) Temperature Coefficient

* Tight Parameter

IRG7PSH73K10PbF

International Rectifier

384.62 KB

Insulated gate bipolar transistor.

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