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IRG7PSH73K10PbF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number	IRG7PSH73K10PbF
Manufacturer	International Rectifier
File Size	384.62 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PSH73K10PbF-InternationalRectifier.pdf

IRG7PSH73K10PbF Product details

Features

Low VCE (ON) Trench IGBT Technology.
Low Switching Losses.
Maximum Junction Temperature 175 °C.
10 μS short Circuit SOA.
Square RBSOA.
100% of The Parts Tested for ILM.
Positive VCE (ON) Temperature Coefficient.
Tight Parameter Distribution.
Lead Free Package Benefits.
High Efficiency in a Wide Range of.

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Published: Mar 8, 2016 |