IRG7RC10FDPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

Features

Low VCE(on) Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode Square RBSOA G E C VCES = 600V IC = 9.0A, TC = 100°C tsc > 3μs, Tjmax = 150°C VCE(on) typ. = 1.6V @ IC = 5A n-channel Benefits.
Benchmark Efficiency for Motor Control.

IRG7RC10FDPBF insulated gate bipolar transistor by International Rectifier - Datasheet Preview

Datasheet Details

Part number	IRG7RC10FDPBF
Manufacturer	International Rectifier (now Infineon)
File Size	344.13 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7RC10FDPBF Datasheet

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Full PDF Text Transcription

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PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • Low VCE(on) Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode Square RBSOA G E C VCES = 600V IC = 9.0A, TC = 100°C tsc > 3μs, Tjmax = 150°C VCE(on) typ. = 1.

Published: Mar 31, 2014 |