IRG7S313U Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
| Part number | IRG7S313U |
|---|---|
| Download | IRG7S313U Datasheet (PDF) |
| File Size | 272.87 KB |
| Manufacturer | International Rectifier |
| Description | PDP TRENCH IGBT |
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| Part Number | Description |
|---|---|
| IRG7S313UPBF | PDP TRENCH IGBT |
| IRG7S319UPBF | PDP TRENCH IGBT |
| IRG7SC12FPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7SC28UPbF | PDP Trench IGBT |
| IRG71C28U | PDP TRENCH IGBT |
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.