IRG7S313U
Overview
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
- 35 V circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency IRP max @ TC= 25°C TJ max 160 A 150 °C l High repetitive peak current capability l Lead Free package C G E n-channel G Gate E C G D2Pak IRG7S313UPbF C Collector E Emitter
