Download the IRG8P08N120KD-EPbF datasheet PDF.
This datasheet also covers the IRG8B08N120KDPbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.
Key Features
Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant
G
E
n-channel
GCE
TO-220AB IRG8B08N120KDPbF
GCE
TO-247AC IRG8P08N120KDPbF
GC E
TO-247AD IRG8P08N120KD-EPbF
G Gate
C Collector
E Emitter
Benefits High Efficiency in a Motor Drive.
Note: The manufacturer provides a single datasheet file (IRG8B08N120KDPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRG8P08N120KD-EPbF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRG8P08N120KD-EPbF. For precise diagrams, and layout, please refer to the original PDF.
IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF VCES = 1200V IC = 8A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 10µs, T...
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Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.
More Datasheets from International Rectifier (now Infineon)
IRG8P08N120KD-EPbF Datasheet
