Download the IRG8P08N120KDPbF datasheet PDF.
This datasheet also covers the IRG8B08N120KDPbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.
Key Features
Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant
G
E
n-channel
GCE
TO-220AB IRG8B08N120KDPbF
GCE
TO-247AC IRG8P08N120KDPbF
GC E
TO-247AD IRG8P08N120KD-EPbF
G Gate
C Collector
E Emitter
Benefits High Efficiency in a Motor Drive.
Note: The manufacturer provides a single datasheet file (IRG8B08N120KDPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRG8P08N120KDPbF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRG8P08N120KDPbF. For precise diagrams, and layout, please refer to the original PDF.
IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF VCES = 1200V IC = 8A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 10µs, T...
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Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.
More Datasheets from International Rectifier (now Infineon)
IRG8P08N120KDPbF Datasheet
