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IRG8P50N120KD-EPbF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRG8P50N120KD-EPbF datasheet PDF. This datasheet also covers the IRG8P50N120KDPbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant Benefits  High Efficiency in a Motor Drive.

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Note: The manufacturer provides a single datasheet file (IRG8P50N120KDPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IRG8P50N120KD-EPbF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRG8P50N120KD-EPbF. For precise diagrams, and layout, please refer to the original PDF.

VCES = 1200V IC = 50A, TC =100°C IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 10µs, TJ(max) = 150°C V...

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tor with Ultrafast Soft Recovery Diode C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRG8P50N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR
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IRG8P15N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR
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IRG8P40N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR
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