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IRGB15B60KD - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

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IRGB15B60KD insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGB15B60KD
Manufacturer	International Rectifier (now Infineon)
File Size	373.45 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB15B60KD Datasheet

Overview

PD - 94383D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB15B60KD IRGS15B60KD IRGSL15B60KD VCES = 600V IC = 15A,.

Key Features

Low VCE (on) Non Punch Through IGBT Technology. www. DataSheet4U. com.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE.

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