* n-channel Equivalent MOSFET Parameters RCE(on) typ. = 158mΩ ID (FET equivalent) = 20A Benefits
* Parallel Operation for Higher Current Applications
* Lower Conduction Losses and Switching Losses
* Higher Switching Frequency up to 150kHz E C G TO-220AB Absolute Maximum
IRGB20B60PD1PBF Datasheet (379.12 KB)
IRGB20B60PD1PBF
International Rectifier
379.12 KB
Smps igbt.
SMPS IGBT PD - 95615 IRGB20B60PD1PbF C WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications
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