Full PDF Text Transcription for IRGB4045DPbF (Reference)
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IRGB4045DPbF. For precise diagrams, and layout, please refer to the original PDF.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature ...
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IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5µs SCSOA • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free Package Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI PD - 97269A IRGB4045DPbF C G E n-channel C VCES = 600V IC = 6.0A, TC = 100
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IRGB4045DPbF Datasheet
