IRGB4059DPbF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* Low VCE (on) Trench IGBT Technology

* Low Switching Losses

* Maximum Junction temperature 175 °C

* 5µs SCSOA

* Square RBSOA

* 100% of The Parts Tested for 4X Rated Current (ILM)

* Positive VCE (on) Temperature Coefficient.

* Ultra Fas

IRGB4059DPbF

International Rectifier

286.93 KB

Insulated gate bipolar transistor.

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