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IRGB4059DPbF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number	IRGB4059DPbF
Manufacturer	International Rectifier
File Size	286.93 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB4059DPbF-InternationalRectifier.pdf

IRGB4059DPbF Product details

Features

Low VCE (on) Trench IGBT Technology.
Low Switching Losses.
Maximum Junction temperature 175 °C.
5µs SCSOA.
Square RBSOA.
100% of The Parts Tested for 4X Rated Current (ILM).
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode.
Tighter Distribution of Parameters.
Lead-Free Package Benefits.
High Efficiency in a Wide Range of.

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Published: Mar 8, 2016 |