Full PDF Text Transcription for IRGB4064DPbF (Reference)
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IRGB4064DPbF. For precise diagrams, and layout, please refer to the original PDF.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature ...
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IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5µs SCSOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free Package Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI PD - 97113 IRGB4064DPbF C G E n-channel C VCES = 600V IC = 10A, TC = 100°C
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IRGB4064DPbF Datasheet
