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IRGB4086PbF - PDP Trench IGBT

General Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Key Features

  • l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP.

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Full PDF Text Transcription for IRGB4086PbF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRGB4086PbF. For precise diagrams, tables, and layout, please refer to the original PDF.

PD - 96222 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l Low VCE(on) and Energ...

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ergy Recovery Circuits in PDP Applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package IRGB4086PbF IRGS4086PbF Key Parameters VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C TJ max c 300 1.90 250 150 V V A °C C G E G C E G C E n-channel G G ate TO-220AB D2 Pak IRGB4086PbF IRGS4086PbF C C ollector E E m itter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve p