* Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant Gate Collector Em itter → Benefits High efficiency in a wide range of applications
IRGB4615DPBF Datasheet (332.06 KB)
IRGB4615DPBF
International Rectifier
332.06 KB
Power mosfet.
IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 15A, TC = 100°C tsc > 5µs, Tjmax = 175.
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