* Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coefficient
IRGB4620DPBF Datasheet (723.54 KB)
IRGB4620DPBF
International Rectifier
723.54 KB
Power mosfet.
IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 20A, TC =100°C tSC ≥ .
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