Download IRGB4620DPBF Datasheet PDF
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Datasheet Summary

IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 20A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.55V @ IC = 12A Applications - Appliance Drive - Inverters - UPS IRGB4620DPbF TO-220AC IRGP4620DPbF TO-247AC IRGP4620D-EPbF TO-247AD n-channel G Gate IRGS4620DPbF D2Pak C Collector E Emitter Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and high power...