IRGB4630DPbF Features
* G Gate C Collector Benefits E Emitter Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) t
IRGB4630DPbF, IRGS4630DPBF Datasheet
Datasheet Details
IRGB4630DPbF, IRGS4630DPBF
International Rectifier
1.20 MB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGB4630DPbF, IRGS4630DPBF.
Please refer to the document for exact specifications by model.
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IRGB4630DPbF Distributor
