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IRGBC20M - INSULATED GATE BIPOLAR TRANSISTOR

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Key Features

  • Short circuit rated - 10µs @ 125°C, V GE = 15V.
  • Switching-loss rating includes all "tail" losses.
  • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 2.5V @VGE = 15V, I C = 8.0A n-channel.

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Full PDF Text Transcription for IRGBC20M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRGBC20M. For precise diagrams, tables, and layout, please refer to the original PDF.

PD - 9.1127 IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Opti...

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, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 2.5V @VGE = 15V, I C = 8.0A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.