IRGIB10B60KD1P - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGIB10B60KD1P
Manufacturer	International Rectifier
File Size	394.00 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGIB10B60KD1P-InternationalRectifier.pdf

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature Rated at 175°C.
Lead-Free.
UL Certified C G E n-channel VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.7V Benefits.
Benchmark Efficiency for Motor C.

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Published: Mar 8, 2016 |