IRGIB10B60KD1P Datasheet, International Rectifier

IRGIB10B60KD1P transistor equivalent, insulated gate bipolar transistor.

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Features and benefits

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10μs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery .

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International Rectifier

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