Full PDF Text Transcription for IRGIB15B60KD1P (Reference)
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IRGIB15B60KD1P. For precise diagrams, and layout, please refer to the original PDF.
PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF....
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ures • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-Free Benefits • Benchmark Efficiency for Motor Control. G E n-channel • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. VCES = 600V IC = 12A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.
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IRGIB15B60KD1P Datasheet
