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IRGIB15B60KD1P - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number	IRGIB15B60KD1P
Manufacturer	International Rectifier
File Size	375.78 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGIB15B60KD1P-InternationalRectifier.pdf

IRGIB15B60KD1P Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature Rated at 175°C.
Lead-Free Benefits.
Benchmark Efficiency for Motor Control. G E n-channel.
Rugged Transient Performance.
Low EMI.
Excellent Current Sh.

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Published: Mar 8, 2016 |