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IRGMC40U - INSULATED GATE BIPOLAR TRANSISTOR

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

  • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 2.0V @VGE = 15V, IC = 20A.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGMC40F 600V Discrete Hi-rel Igbt
IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR
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IRGMIC50U Ultra Fast Speed IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD -90717B IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 2.0V @VGE = 15V, IC = 20A Description n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency.
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