IRGP4069DPbF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGP4069DPbF
Manufacturer	International Rectifier
File Size	303.95 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4069DPbF-InternationalRectifier.pdf

Low VCE (ON) Trench IGBT Technology.
Low Switching Losses.
Maximum Junction Temperature 175 °C.
5 μS short circuit SOA.
Square RBSOA.
100% of The Parts Tested for ILM.
Positive VCE (ON) Temperature Coefficient.
Tight Parameter Distribution.
Lead Free Package C G E n-channel VCES = 600V IC(Nominal) = 35A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.6V Benefits.
High Efficiency in a Wide Range of Applicati.

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Published: Mar 8, 2016 |