Datasheet4U.com

IRGP4069PbF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

📥 Download Datasheet

IRGP4069PbF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGP4069PbF
Manufacturer	International Rectifier (now Infineon)
File Size	263.06 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRGP4069PbF Download (PDF)

Overview

INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

Low VCE (ON) Trench IGBT Technology.
Low Switching Losses.
Maximum Junction Temperature 175 °C.
5 μS short circuit SOA.
Square RBSOA.
100% of The Parts Tested for ILM.
Positive VCE (ON) Temperature Coefficient.
Tight Parameter Distribution.
Lead Free Package PD - 97426 IRGP4069PbF IRGP4069-EPbF C G E n-channel VCES = 600V IC(Nominal) = 35A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.6V Benefits.
High E.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRGP4069-EPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4069D-EPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4069DPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4062-EPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4062D-EPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4062DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063-EPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063D-EPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063D1-EPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063D1PBF	INSULATED GATE BIPOLAR TRANSISTOR