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IRGP4078DPBF Datasheet, International Rectifier

IRGP4078DPBF transistor equivalent, insulated gate bipolar transistor.

IRGP4078DPBF Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 839.12KB)

IRGP4078DPBF Datasheet

Features and benefits


* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction temperature 175°C
* 5 µs short circuit SOA
* Square RBSOA
* 100% o.

Application

Features
* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction temperature 175°C .

Image gallery

IRGP4078DPBF Page 1 IRGP4078DPBF Page 2 IRGP4078DPBF Page 3

TAGS

IRGP4078DPBF
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

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