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IRGP4262D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Base part number IRGP4262DPBF IRGP4262D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP4262DPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4263-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4263D-EPbF Insulated Gate Bipolar Transistor
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IRGP4263PBF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription

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IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 24A Applications • Industrial Motor Drive • UPS G Gate G E C G G n-channel G IRGP4262DPbF TO-247AC C Collector C E C E G IRGP4262D-EPbF TO-247AD E Emitter Features Low VCE(ON) and Switching Losses 5.
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