IRGP4263PBF Overview
IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A G E C G G n-channel Applications Industrial Motor Drive Inverters UPS Welding G Gate C G IRGP4263PbF C Collector E G C I RGP4263‐EPbF E Emitter.