Download the IRGP4266D-EPbF datasheet PDF.
This datasheet also covers the IRGP4266DPbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.
Key Features
Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Co-efficient
G
E
n-channel
G Gate
GCE
IRGP4266DPbF TO‐247AC
C Collector
E GC
IRGP4266D‐EPbF TO‐247AD
E Emitter
Benefits High Efficiency in a Wide Range of.
Note: The manufacturer provides a single datasheet file (IRGP4266DPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRGP4266D-EPbF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRGP4266D-EPbF. For precise diagrams, and layout, please refer to the original PDF.
IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 5.5µs, TJ(max) = 175°C VCE(ON) t...
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Ultrafast Soft Recovery Diode C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications Industrial Motor Drive UPS Solar Inverters Welding Features Low VCE(ON) and Switching Losses 5.
More Datasheets from International Rectifier (now Infineon)
IRGP4266D-EPbF Datasheet
