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IRGP4640D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGP4640D-EPbF datasheet PDF. This datasheet also covers the IRGP4640DPbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant G Gate C Collector E Emitter Benefits High efficiency in a wide range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGP4640DPbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRGP4640D-EPbF Insulated Gate Bipolar Transistor Infineon
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP4640DPbF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4640-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4640PBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4630-EDPbF Insulated Gate Bipolar Transistor
IRGP4630DPbF Insulated Gate Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VCES = 600V IC = 40A, TC = 100°C IRGP4640DPbF IRGP4640D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C C C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.