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IRGP4640DPbF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant G Gate C Collector E Emitter Benefits High efficiency in a wide range of.

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VCES = 600V IC = 40A, TC = 100°C IRGP4640DPbF IRGP4640D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C C C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.
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