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International Rectifier Electronic Components Datasheet

IRGP4640DPbF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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IRGP4640DPbF
IRGP4640D-EPbF
VCES = 600V
IC = 40A, TC = 100°C
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
CC
C
tSC 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.60V @ IC = 24A
G
E
n-channel
GC E
TO-247AC
IRGP4640DPbF
GC E
TO-247AD
IRGP4640D-EP
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
Features
Low VCE(ON) and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
5μs short circuit SOA
Lead-Free, RoHS compliant
G
Gate
C
Collector
E
Emitter
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGP4640DPbF
IRGP4640D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
http://www.DataSheet4U.net/
Tube
25
25
Orderable part number
IRGP4640DPbF
IRGP4640D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
ePulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
600 V
65
40
72
96 A
65
40
96
±20 V
±30
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TST G
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
250
125
-55 to +175
300 (0.063 in. (1.6mm) from case)
W
°C
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
10 lbf·in (1.1 N·m)
RJC (IGBT)
RJC (Diode)
RCS
RJA
Parameter
fJunction-to-Case (IGBT)
fJunction-to-Case (Diode)
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.60
1.62
–––
40
Units
°C/W
1 www.irf.com © 2012 International Rectifier
January 8, 2013
datasheet pdf - http://www.DataSheet4U.net/


International Rectifier Electronic Components Datasheet

IRGP4640DPbF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRGP4640DPbF/IRGP4640D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
Parameter
Collector-to-Emitter BreakdownVoltage
Min. Typ. Max. Units Conditions
d600 —
V VGE = 0V, IC = 100μA
V(BR)CE S/T J
T emperatureCoeff. of B reakdownVoltage
— 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C)
— 1.60 1.90
IC = 24A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.90 —
V IC = 24A, VGE = 15V, TJ = 150°C
— 2.00 —
IC = 24A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
4.0 — 6.5
V VCE = VGE, IC = 700μA
VGE(th)/T J
Threshold Voltage temp. coefficient
— -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
gfe Forward Transconductance
— 17 — S VCE = 50V, IC = 24A, PW = 80μs
ICES
Collector-to-Emitter Leakage Current
— 2.0 25 μA VGE = 0V, VCE = 600V
— 775 —
VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop
— 1.80 2.6
V IF = 24A
— 1.28 —
IF = 24A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 50 75
IC = 24A
Qge Gate-to-Emitter Charge (turn-on)
— 13 20 nC VGE = 15V
Qgc
Eon
Eoff
Etotal
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
— 21 31
VCC = 400V
— 115 201
IC = 24A, VCC = 400V, VGE = 15V
— 600 700 μJ RG = 10, L = 200μH, LS = 150nH, TJ = 25°C
— 715 901
E nergy los s es include tail & diode revers e recovery
td(on) Turn-On delay time
— 41 53
IC = 24A, VCC = 400V, VGE = 15V
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
22
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104
31
115
— 29 41
— 420 —
— 840 —
— 1260 —
— 40 —
— 24 —
ns RG = 10, L = 200μH, LS = 150nH, TJ = 25°C
IC = 24A, VCC = 400V, VGE=15V
μJ RG=10, L= 200μH, LS=150nH, TJ = 175°C
E nergy los s es include tail & diode revers e recovery
IC = 24A, VCC = 400V, VGE = 15V
ns RG = 10, L = 200μH, LS = 150nH
td(off) Turn-Off delay time
— 125 —
TJ = 175°C
tf Fall time
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
— 39 —
— 1490 —
— 129 —
— 45 —
pF VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 96A
RBSOA
SCSOA
Erec
trr
Irr
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
FULL SQUARE
5 ——
— 621 —
— 89 —
— 37 —
VCC = 480V, Vp =600V
Rg = 10, VGE = +20V to 0V
μs VCC = 400V, Vp =600V
Rg = 10, VGE = +15V to 0V
μJ TJ = 175°C
ns VCC = 400V, IF = 24A
A VGE = 15V, Rg = 10, L =200μH, Ls = 150nH
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 10
‚ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
ƒ Pulse width limited by max. junction temperature.
„ Ris measured at TJ of approximately 90°C.
2 www.irf.com © 2012 International Rectifier
January 8, 2013
datasheet pdf - http://www.DataSheet4U.net/


Part Number IRGP4640DPbF
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
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IRGP4640DPbF Datasheet PDF





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International Rectifier





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