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IRGP4640PBF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGP4640PBF datasheet PDF. This datasheet also covers the IRGP4640-EPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low V CE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5µs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGP4640-EPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRGP4640D-EPbF Insulated Gate Bipolar Transistor Infineon
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IRGP4630D-EPbf IGBT Infineon
IRGP4630DPbf IGBT Infineon
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP4640-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4640D-EPbF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4640DPbF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4630-EDPbF Insulated Gate Bipolar Transistor
IRGP4630DPbF Insulated Gate Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRGP4640PbF IRGP4640-EPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V IC = 40A, TC = 100°C C C C tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.