IRGP4650D-EPBF Features
* Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard s
IRGP4650D-EPBF, IRGP4650DPBF Datasheet
Datasheet Details
IRGP4650D-EPBF, IRGP4650DPBF
International Rectifier
344.30 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGP4650D-EPBF, IRGP4650DPBF.
Please refer to the document for exact specifications by model.
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