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IRGP4750D-EPbF - Insulated Gate Bipolar Transistor

Download the IRGP4750D-EPbF datasheet PDF. This datasheet also covers the IRGP4750DPbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  G E n-channel G Gate E GC IRGP4750DPbF  TO‐247AC  C Collector E GC IRGP4750D‐EPbF  TO‐247AD  E Emitter Benefits High Efficiency in a Wide Range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGP4750DPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP4750DPbF Insulated Gate Bipolar Transistor
IRGP4740D-EPbF Insulated Gate Bipolar Transistor
IRGP4740DPbF Insulated Gate Bipolar Transistor
IRGP4760-EPbF Insulated Gate Bipolar Transistor
IRGP4760D-EPbF Insulated Gate Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  IRGP4750DPbF IRGP4750D-EPbF VCES = 650V IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 35A Applications  Industrial Motor Drive  UPS  Solar Inverters  Welding Features Low VCE(ON) and Switching Losses 5.