IRGP4750DPbF - Insulated Gate Bipolar Transistor

International Rectifier

Datasheet Details

Part number	IRGP4750DPbF
Manufacturer	International Rectifier
File Size	652.44 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP4750DPbF-InternationalRectifier.pdf

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C G E n-channel G Gate E GC IRGP4750DPbF TO‐247AC C Collector E GC IRGP4750D‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of.

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Published: Oct 4, 2015 |