Datasheet Details
| Part number | IRGP4750DPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 652.44 KB |
| Description | Insulated Gate Bipolar Transistor |
| Datasheet |
 IRGP4750DPbF Datasheet
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Key Features
- Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C G E n-channel G Gate E GC IRGP4750DPbF TO‐247AC C Collector E GC IRGP4750D‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of.