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IRGPS4067DPBF - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

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IRGPS4067DPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGPS4067DPBF

Datasheet Details

Part number	IRGPS4067DPBF
Manufacturer	International Rectifier
File Size	335.48 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPS4067DPBF Datasheet
Additional preview pages of the IRGPS4067DPBF datasheet.

Product details

Features

Low VCE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant C IRGPS4067DPbF VCES = 600V IC(Nominal) = 120A G E tSC 5μs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.70V Benefits.
High Efficiency in a Wide Range of.

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Published: Dec 6, 2011 |