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International Rectifier Electronic Components Datasheet

IRGPS4067DPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD - 97736
INSULATED GATE BIPOLAR TRANSISTOR WITH
IRGPS4067DPbF
ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
5μs SCSOA
Square RBSOA
100% of The Parts Tested for ILM 
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
C
G
E
n-channel
VCES = 600V
IC(Nominal) = 120A
tSC 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.70V
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
C
E
GC
Super-247
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
RJC (IGBT)
RJC (Diode)
RCS
RJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
240g
160g
120
360
480
240
160
480
±20
±30
750
375
-55 to +175
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.20
0.63
–––
40
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
10/18/11
Datasheet pdf - http://www.DataSheet4U.net/


International Rectifier Electronic Components Datasheet

IRGPS4067DPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

www.DataSheet.co.kr
IRGPS4067DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
V(BR)CES
V(BR)CES/T J
Collector-to-Emitter BreakdownVoltage
T emperatureCoeff. of B reakdownVoltage
600 —
— 0.27
1.70
2.05
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.15 —
— 2.20 —
VGE(th)
VGE (th)/T J
Gate Threshold Voltage
Threshold Voltage temp. coefficient
4.0 — 6.5
— -17 —
gfe Forward Transconductance
— 77 —
ICES
Collector-to-Emitter Leakage Current
— 1.0 150
— 2.3 —
VFM Diode Forward Voltage Drop
— 2.4 3.0
— 1.9 —
IGES Gate-to-Emitter Leakage Current
— — ±400
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
hMin. Typ. Max.
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 240 360
— 70 105
— 90 135
— 5750 7990
— 3430 4360
— 9180 12350
— 80 100
— 70 125
— 190 220
— 40 60
— 7740 —
— 4390 —
— 12130 —
— 80 —
— 75 —
— 230 —
— 55 —
— 7750 —
— 550 —
— 225 —
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
5 ——
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
— 500 —
— 130 —
— 36 —
Units
V
V/°C
V
V
mV/°C
S
μA
mA
V
nA
Conditions
eVGE = 0V, IC = 100μA
VGE = 0V, IC = 4.0mA (25°C-175°C)
IC = 120A, VGE = 15V, TJ = 25°C
IC = 120A, VGE = 15V, TJ = 150°C
IC = 120A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 5.6mA
VCE = VGE, IC = 5.6mA (25°C - 175°C)
VCE = 50V, IC = 120A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 120A
IF = 120A, TJ = 175°C
VGE = ±20V
Units
nC
μJ
ns
Conditions
IC = 120A
VGE = 15V
VCC = 400V
IC = 120A, VCC = 400V, VGE = 15V
RG = 4.7, L = 66μH, TJ = 25°C
E nergy los s es include tail & diode revers e recovery
IC = 120A, VCC = 400V, VGE = 15V
RG = 4.7, L = 66μH, TJ = 25°C
IC = 120A, VCC = 400V, VGE=15V
μJ RG=4.7, L=66μH, TJ = 175°C
E nergy los s es include tail & diode revers e recovery
IC = 120A, VCC = 400V, VGE = 15V
ns RG = 4.7, L = 66μH
TJ = 175°C
pF VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 480A
VCC = 480V, Vp =600V
Rg = 4.7, VGE = +20V to 0V
μs VCC = 400V, Vp =600V
Rg = 4.7, VGE = +15V to 0V
μJ TJ = 175°C
ns VCC = 400V, IF = 120A
A VGE = 15V, Rg = 4.7, L =100μH
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 66μH, RG = 4.7tested in production ILM 400A.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Ris measured at TJ of approximately 90°C.
… Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current
limit is 120A. Note that current limitations arising from heating of the device leads may occur.
† Maximum limits are based on statistical sample size characterization.
2 www.irf.com Datasheetpdf-http://www.DataSheet4U.net/


Part Number IRGPS4067DPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
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International Rectifier





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