IRGPS4067DPBF Datasheet | International Rectifier

.DataSheet.co.kr - 97736 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features - - - - - - - - - Low VCE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA 100% of The Parts Tested for ILM  Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS pliant VCES = 600V IC(Nominal) = 120A G E tSC 5μs, TJ(max) = 175°C n-channel VCE(on) typ. = 1.70V Benefits - High Efficiency in a Wide Range of Applications - Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses - Rugged Transient Performance for...