Part IRGPS4067DPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Category Transistor
Manufacturer International Rectifier
Size 335.48 KB
International Rectifier
IRGPS4067DPBF

Overview

  • Low VCE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA 100% of The Parts Tested for ILM  Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant C IRGPS4067DPbF VCES = 600V IC(Nominal) = 120A G E tSC 5μs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.70V Benefits
  • High Efficiency in a Wide Range of Applications
  • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
  • Rugged Transient Performance for Increased Reliability
  • Excellent Current Sharing in Parallel Operation
  • Low EMI G Gate E C G Super-247 C Collector E Emitter