IRGPS4067DPBF Datasheet | International Rectifier

Features - - - - - - - - - Low VCE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA 100% of The Parts Tested for ILM  Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, Ro HS pliant IRGPS4067DPb F VCES = 600V IC(Nominal) = 120A G E t SC 5μs, TJ(max) = 175°C n-channel VCE(on) typ. = 1.70V Benefits - High Efficiency in a Wide Range of Applications - Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses - Rugged Transient Performance for Increased Reliability - Excellent Current Sharing in Parallel Operation - Low EMI G Gate E C G Super-247 C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Max. Units V g 160g 600 240 c 360 480 240 160 480 ±20 ±30 750 375 -55 to +175 °C W V A d Continuous Gate-to-Emitter Voltage Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA f Thermal Resistance Junction-to-Case-(each Diode) f Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Parameter Min. - - - - - -...