Datasheet4U Logo Datasheet4U.com

IRGPS46160D - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IRGPS46160D, a member of the IRGPS46160DPBF Insulated Gate Bipolar Transistor family.

Datasheet Summary

Features

  • Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5µs short circuit SOA Lead-Free, RoHS compliant IRGPS46160DPbF.

📥 Download Datasheet

Datasheet preview – IRGPS46160D

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
VCES = 600V IC = 160A, TC = 100°C tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.
Published: |