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International Rectifier Electronic Components Datasheet

IRGPS46160D Datasheet

Insulated Gate Bipolar Transistor

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VCES = 600V
IC = 160A, TC = 100°C
tSC 5µs, TJ(max) = 175°C
VCE(on) typ. = 1.70V @ IC = 120A
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
Features
Low VCE(ON) and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
5µs short circuit SOA
Lead-Free, RoHS compliant
IRGPS46160DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
C
E
C
G
G
E
n-channel
Super-247
G
Gate
C
Collector
E
E m itter
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGPS46160DPbF
Package Type
Super-247
Standard Pack
Form
Quantity
Tube
25
Orderable part number
IRGPS46160DPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C
Continuous Collector Current
ICM
Pulse Collector Current, VGE = 15V
ILM
Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IFM
Diode Continous Forward Current
Diode Maximum Forward Current
VGE
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C
Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RqJC (IGBT)
RqJC (Diode)
RqCS
RqJA
Junction-to-Case (IGBT)
Junction-to-Case (Diode)
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
Max.
600
240
160
360
480
240
160
480
±20
±30
750
375
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
Typ.
–––
–––
–––
–––
–––
0.24
–––
–––
Max.
0.20
0.63
–––
40
Units
V
A
V
W
°C
Units
°C/W
1
www.infineon.com © 2019 Infineon Technologies AG
September 20, 2019


International Rectifier Electronic Components Datasheet

IRGPS46160D Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

IRGPS46160DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
DV(BR)CES/DTJ
Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
4.0
DVGE(th)/DTJ
Threshold Voltage temp. coefficient
gfe
Forward Transconductance
ICES
Collector-to-Emitter Leakage Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Qg
Total Gate Charge
Qge
Gate-to-Emitter Charge
Qgc
Gate-to-Collector Charge
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Etotal
Total Switching Loss
td(on)
Turn-On delay time
tr
Rise time
td(off)
Turn-Off delay time
tf
Fall time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Etotal
Total Switching Loss
td(on)
Turn-On delay time
tr
Rise time
td(off)
Turn-Off delay time
tf
Fall time
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Typ.
0.27
1.70
2.15
2.20
-17
77
1.0
2.3
2.4
1.9
Typ.
240
70
90
5750
3430
9180
80
70
190
40
7740
4390
12130
80
75
230
55
7750
550
225
Max.
2.05
6.5
150
3.0
±400
Max.
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
5
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
500
130
36
Units
V
V/°C
V
V
mV/°C
S
µA
mA
V
nA
Conditions
VGE = 0V, IC = 100µA
VGE = 0V, IC = 4.0mA (25°C-175°C)
IC = 120A, VGE = 15V, TJ = 25°C
IC = 120A, VGE = 15V, TJ = 150°C
IC = 120A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 5.6mA
VCE = VGE, IC = 5.6mA (25°C - 175°C)
VCE = 50V, IC = 120A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 120A
IF = 120A, TJ = 175°C
VGE = ±20V
Units
nC
IC = 120A
VGE = 15V
VCC = 400V
Conditions
µJ IC = 120A, VCC = 400V, VGE = 15V
RG = 4.7W, L = 66µH, TJ = 25°C
Energy losses include tail
ns & diode reverse recovery
µJ IC = 120A, VCC = 400V, VGE=15V
RG = 4.7W, L = 66µH, TJ = 175°C
Energy losses include tail
ns & diode reverse recovery
pF VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 480A
VCC = 480V, Vp 600V
Rg = 4.7 W, VGE = +20V to 0V
µs VCC = 400V, Vp  600V
Rg = 4.7 W, VGE = +15V to 0V
µJ TJ = 175°C
ns VCC = 400V, IF = 120A
A VGE = 15V, Rg = 4.7 W, L = 100µH
Notes:
VCC = 80% (VCES), VGE = 20V, L = 66µH, RG = 4.7tested in production ILM 400A.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Ris measured at TJ of approximately 90°C.
Values influenced by parasitic L and C in measurement.
Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current
limit is 120A. Note that current limitations arising from heating of the device leads may occur.
2
www.infineon.com © 2019 Infineon Technologies AG
September 20, 2019


Part Number IRGPS46160D
Description Insulated Gate Bipolar Transistor
Maker International Rectifier
PDF Download

IRGPS46160D Datasheet PDF






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