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International Rectifier Electronic Components Datasheet

IRGR4610DPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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IRGR4610DPbF
IRGS4610DPbF
IRGB4610DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V
IC = 10A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. = 1.7V @ 6A
C
G
E
n-channel
C
C
C
E
G
D-Pak
IRGR4610DPbF
E
G
E
C
G
D2-Pak
TO-220AB
IRGS4610DPbF IRGB4610DPbF
Applications
Appliance Drives
Inverters
UPS
G
Gate
C
C o lle c to r
E
Em itter
Features
Benefits
Low VCE(ON) and switching losses
High efficiency in a wide range of applications and switching frequencies
Square RBSOA and maximum junction temperature 175°C
Improved reliability due to rugged hard switching performance and higher
power capability
Positive VCE(ON) temperature coefficient and tighter distribution of
parameters
Excellent current sharing in parallel operation
5μs short circuit SOA
Enables short circuit protection scheme
Lead-free, RoHS compliant
Environmentally friendly
Base part number
IRGR4610DPbF
IRGS4610DPbF
IRGB4610DPbF
Package Type
D-PAK
D2 PAK
TO-220AB
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Right
Tape and Reel Left
Tube
Tape and Reel Right
Tape and Reel Left
Tube
Quantity
75
2000
3000
3000
50
800
800
50
Orderable Part Number
IRGR4610DPbF
IRGR4610DTRPbF
IRGR4610DTRRPbF
IRGR4610DTRLPbF
IRGS4610DPbF
IRGS4610DTRRPbF
IRGS4610DTRLPbF
IRGB4610DPbF
Absolute Maximum Ratings
Param e te r
VCES
Collector-to-Emitter Breakdown Voltage
IC@ TC = 25°C
Continuous Collector Current
IC@ TC = 100°C
ICM
ILM
Continuous Collector Current
cPulsed Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C
Diode Continuous Forward Current
IF @ TC=100°C
Diode Continuous Forward Current
IFM Diode Maximum Forward Current ‚
VGE
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC =25°
Maximum Power Dissipation
PD @ TC =100°
Maximum Power Dissipation
TJ Operating Junction and
T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw TO-220
Max.
600
16
10
18
24
10
6
24
± 20
± 30
77
39
-40 to + 175
300
10lbf. In (1.1 N.m)
Units
V
A
V
W
°C
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
October 25, 2013
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRGR4610DPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRGR/S/B4610DPbF
Thermal Resistance
Param e te r
dRθJC Thermal Resistance, Junction-to-Case -(IGBT)
dRθJC Thermal Resistance, Junction-to-Case -(Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220)
hThermal Resistance, Junction-to-Ambient (PCB mount) (D-PAK)
Thermal Resistance, Junction-to-Ambient (D-PAK)
RθJA Thermal Resistance, Junction-to-Ambient (PCB mount, Steady State)
h(D2PAK)
Thermal Resistance, Junction-to-Ambient ( Socket mount) (TO-220)
Min.
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.5
–––
–––
–––
–––
Max.
1.9
6.3
–––
50
110
40
62
Units
°C/W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Param e te r
Min. Typ. Max.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage
600
0.36
1.7
2.0
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.07 —
— 2.14 —
VGE(th)
Gate Threshold Voltage
4.0 — 6.5
ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient
gfe Forward Transconductance
— -13 —
— 5.8 —
ICES
Collector-to-Emitter Leakage Current
— — 25
— — 250
VFM Diode Forward Voltage Drop
— 1.60 2.30
— 1.30 —
IGES Gate-to-Emitter Leakage Current
— — ±100
Units
Conditions
eV VGE = 0V, Ic =100 μA
eV/°C VGE = 0V, Ic = 250μA ( 25 -175 oC )
IC = 6.0A, VGE = 15V, TJ = 25°C
V IC = 6.0A, VGE = 15V, TJ = 150°C
IC = 6.0A, VGE = 15V, TJ = 175°C
V VCE = VGE, IC = 150μA
mV/°C VCE = VGE, IC = 250μA ( 25 -175 oC )
S VCE = 25V, IC = 6.0A, PW =80μS
μA VGE = 0V,VCE = 600V
VGE = 0V, VCE = 600V, TJ =175°C
V IF = 6.0A
IF = 6.0A, TJ = 175°C
nA VGE = ± 20 V
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 1.0mH, RG = 100Ω.
‚ Rθ is measured at TJ approximately 90°C.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Pulse width limited by max. junction temperature.
… Values influenced by parasitic L and C in measurement
† When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
October 25, 2013Free Datasheet http://www.Datasheet4U.com


Part Number IRGR4610DPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 15 Pages
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