IRGS15B60KPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

Features

Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Lead-Free IRGS15B60KPbF C VCES = 600V IC = 15A, TC=100°C G E tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V n-channel Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. D2Pak IRGS15B60KPbF.

IRGS15B60KPBF insulated gate bipolar transistor by International Rectifier - Datasheet Preview

Datasheet Details

Part number	IRGS15B60KPBF
Manufacturer	International Rectifier (now Infineon)
File Size	283.69 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGS15B60KPBF Datasheet

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Full PDF Text Transcription

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PD - 96358 INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free IRGS15B60KPbF C VCES = 600V IC = 15A, TC=100°C G E tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V n-channel Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.

Published: Mar 31, 2014 |