Part number:
IRGSL4B60KD1PbF
Manufacturer:
International Rectifier
File Size:
434.12 KB
Description:
Insulated gate bipolar transistor.
IRGSL4B60KD1PbF Datasheet (434.12 KB)
* C VCES = 600V
* Low VCE (on) Non Punch Through IGBT Technology.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Positive VCE (on) Temperature Coefficient.
* Maximum Junction Temperature rated at 175°C.
* Lead-Free G E n-channel IC = 7.6A, TC=100
IRGSL4B60KD1PbF Datasheet (434.12 KB)
IRGSL4B60KD1PbF
International Rectifier
434.12 KB
Insulated gate bipolar transistor.
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