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IRGSL4B60KD1PbF Datasheet – Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Download the IRGSL4B60KD1PbF datasheet PDF. This datasheet also includes the IRGS4B60KD1PBF variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGS4B60KD1PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Overview

PD - 95616A IRGB4B60KD1PbF IRGS4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF ULTRAFAST SOFT RECOVERY.

Key Features

  • C VCES = 600V.
  • Low VCE (on) Non Punch Through IGBT Technology.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Positive VCE (on) Temperature Coefficient.
  • Maximum Junction Temperature rated at 175°C.
  • Lead-Free G E n-channel IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 2.1V Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current Sharin.