IRGSL4B60KD1PbF Features
* C VCES = 600V
* Low VCE (on) Non Punch Through IGBT Technology.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Positive VCE (on) Temperature Coefficient.
* Maximum Junction Temperature rated at 175°C.
* Lead-Free G E n-channel IC = 7.6A, TC=100
IRGSL4B60KD1PbF, IRGS4B60KD1PBF Datasheet
Datasheet Details
IRGSL4B60KD1PbF, IRGS4B60KD1PBF
International Rectifier
434.12 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGSL4B60KD1PbF, IRGS4B60KD1PBF.
Please refer to the document for exact specifications by model.
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