IRHF54034 Datasheet | International Rectifier

Features : n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight - Current is limited by package For footnotes refer to the last page 12- 9.5 48 25 0.2 ±20 270 12 2.5 9.6 -55 to 150 Pre-Irradiation Units A W/°C V m J A m J V/ns o 300 ( 0.063 in./1.6mm from case for 10s) 0.98 (Typical) g .irf. 04/27/06 IRHF57034, JANSR2N7492T2 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min - - 2.0 12 - - - - - - - - - - - - Typ Max Units - 0.062 - - - - - - - - - - - - - -...