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IRHF597230 - RADIATION HARDENED POWER MOSFET THRU-HOLE

Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Puls.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHF593230 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHF53034 (IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHF53130 RADIATION HARDENED POWER MOSFET
IRHF53230 RADIATION HARDENED POWER MOSFET
IRHF54034 (IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLE

Full PDF Text Transcription

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www.DataSheet4U.com PD - 94450 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number IRHF597230 IRHF593230 Radiation Level RDS(on) ID 100K Rads (Si) 0.54Ω -4.5A 300K Rads (Si) 0.54Ω -4.5A IRHF597230 200V, P-CHANNEL 4 # TECHNOLOGY c International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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