* s Radiation Hardened up to 1 x 105 Rads (Si) s Single Event Burnout (SEB) Hardened s Single Event Gate Rupture (SEGR) Hardened s Gamma Dot (Flash X-Ray) Hardened s Neutron Tolerant s Identical Pre- and Post-Electrical Test Conditions s Repetitive Avalanche Rating s Dynamic dv/dt Rating s Simple Dri
IRHF7310SE Datasheet (35.41 KB)
IRHF7310SE
International Rectifier
35.41 KB
N-channel transistor.
Provisional Data Sheet No. PD-9.1444A REPETITIVE AVALANCHE AND dv/dt RATED IRHF7310SE HEXFET® TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD .
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