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IRHF8130 Datasheet RADIATION HARDENED POWER MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRHF8130 datasheet PDF. This datasheet also includes the IRHF4130 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRHF4130_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Overview

www.DataSheet4U.com PD - 90653E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF7130 100K Rads (Si) IRHF3130 300K Rads (Si) IRHF4130 600K Rads (Si) IRHF8130 1000K Rads (Si) R DS(on) 0.18 Ω 0.18 Ω 0.18 Ω 0.18Ω IRHF7130 JANSR2N7261 100V, N-CHANNEL REF: MIL-PRF-19500/601 RAD Hard HEXFET TECHNOLOGY ID QPL Part Number 8.0A JANSR2N7261 8.0A JANSF2N7261 8.0A JANSG2N7261 8.0A JANSH2N7261 ™ ® TO-39 International Rectifier’s RADHard ogy provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avala.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
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