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IRHLA7670Z4 - RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE

Key Features

  • n n n n n n n n n 5V CMOS and TTL Compatible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings (Per Die) Parameter ID@ VGS = ±4.5V, TC= 25°C ID@ VGS = ±4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD-97251 2N7633M2 IRHLA7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE (14-LEAD FLAT PACK) Product Summary Part Number IRHLA7670Z4 IRHLA7630Z4 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.60Ω 1.36Ω 0.60Ω 1.36Ω ID 0.8A -0.56A 0.8A -0.56A CHANNEL N P N P 14-Lead Flat Pack International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.