IRHLA770Z4
Features
: n n n n n n n n n n
5V CMOS and TTL patible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight plimentary P-Channel Available IRHLA7970Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 0.8 0.5 3.2 0.6 0.005 ±10 16 0.8 0.06 10.2 -55 to 150
Pre-Irradiation
Units
W/°C
V m J A m J V/ns
°C
300 (0.63 in./1.6 mm from case for 10s) 0.52 (Typical) g
.irf.
03/17/08
.Data Sheet.in
IRHLA770Z4, 2N7620M2
Pre-Irrad...
