IRHLA770Z4 Datasheet PDF - International Rectifier RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE Specs

IRHLA770Z4 - RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE

Datasheet Summary

Features

n n n n n n n n n n 5V CMOS and TTL Compatible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLA7970Z4 Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipa.

Datasheet Details

Part number	IRHLA770Z4
Manufacturer	International Rectifier
File Size	246.67 KB
Description	RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE
Datasheet	IRHLA770Z4 Datasheet
Additional preview pages of the IRHLA770Z4 datasheet.

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Full PDF Text Transcription

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PD-97305 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK) Product Summary Part Number Radiation Level RDS(on) IRHLA770Z4 100K Rads (Si) 0.60Ω IRHLA730Z4 300K Rads (Si) 0.60Ω ID 0.8A 0.8A 2N7620M2 IRHLA770Z4 60V, Quad N-CHANNEL TECHNOLOGY 14-Lead Flat Pack International Rectifier’s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.

Published: Nov 9, 2010 |