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IRHLUB730Z4 Datasheet N-CHANNEL POWER MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRHLUB730Z4 datasheet PDF. This datasheet also includes the IRHLUB770Z4 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRHLUB770Z4-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.

The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.

This is achieved while maintaining single event gate rupture and single event burnout immunity.

Overview

PD-95813L IRHLUB770Z4 JANSR2N7616UB RADIATION HARDENED POWER MOSFET SURFACE MOUNT (UB) Product Summary Part Number Radiation Level RDS(on) ID IRHLUB770Z4 100 kRads(Si) 0.68 0.8A IRHLUB730Z4 300 kRads(Si) 0.68 0.

Key Features

  • 5V CMOS and TTL Compatible.
  • Fast Switching.
  • Single Event Effect (SEE) Hardened.
  • Low Total Gate Charge.
  • Simple Drive Requirements.
  • Hermetically Sealed.
  • Ceramic Package.
  • Surface Mount.
  • Light Weight.
  • Complementary P-Channel Available- IRHLUB7970Z4, IRHLUBN7970Z4 IRHLUBC7970Z4, IRHLUBCN7970Z4.
  • ESD Rating: Class 0 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 4.5V, TC = 25°C Continuous Drain Current ID2.