IRHM53064
IRHM53064 is RADIATION HARDENED POWER MOSFET manufactured by International Rectifier.
- Part of the IRHM57064 comparator family.
- Part of the IRHM57064 comparator family.
Features
: n n n n n n n n n n
Single Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight
- Current is limited by package For footnotes refer to the last page 35- 35- 140 208 1.67 ±20 1090 35 20.8 4.8 -55 to 150
Pre-Irradiation
Units A
W/°C
V m J A m J V/ns o
300 (0.063 in. (1.6 mm from case for10s ) 9.3 (Typical ) g
07/19/04
IRHM57064
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
- - 2.0 42
- -
- -
- -
- -
- -
- -
Typ Max Units
- 0.063
- -
- -
- -
- -
- -
- -
- - 6.8 0.012 4.0
- 10 25 100 -100 160 55 65 35 125 75 50
- - V V/°C Ω V S( )...