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IRHM54064 - (IRHM5x064) RADIATION HARDENED POWER MOSFET

Download the IRHM54064 datasheet PDF. This datasheet also covers the IRHM57064 variant, as both devices belong to the same (irhm5x064) radiation hardened power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Di.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHM57064_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRHM54260 (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE IRF
IRHM53260 (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE IRF
IRHM57260 Power MOSFET IRF
IRHM57260SE Power MOSFET IRF
IRHM58260 (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHM54160 (IRHM5x160) RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM54Z60 (IRHM5xZ60) RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM53064 (IRHM5x064) RADIATION HARDENED POWER MOSFET
IRHM53160 (IRHM5x160) RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM53Z60 (IRHM5xZ60) RADIATION HARDENED POWER MOSFET THRU-HOLE

Full PDF Text Transcription

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www.DataSheet4U.com PD - 93792D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) IRHM54064 IRHM58064 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.012Ω 0.012Ω 0.012Ω 0.013Ω ID 35A* 35A* 35A* 35A* IRHM57064 60V, N-CHANNEL 5 TECHNOLOGY ™ TO-254AA International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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