IRHM57064 Datasheet | International Rectifier

Features : n n n n n n n n n n Single Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight - Current is limited by package For footnotes refer to the last page 35- 35- 140 208 1.67 ±20 1090 35 20.8 4.8 -55 to 150 Pre-Irradiation Units A W/°C V m J A m J V/ns o 300 (0.063 in. (1.6 mm from case for10s ) 9.3 (Typical ) g 07/19/04 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min - - 2.0 42 - - - - - - - - - - - - Typ Max Units - 0.063 - - - - - - - - - - - - - - 6.8 0.012 4.0 - 10 25 100 -100 160 55 65 35 125 75 50 - - V V/°C Ω V S( )...