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IRHM7064 - (IRHM7064 / IRHM8064) TRANSISTOR N-CHANNEL

Download the IRHM7064 datasheet PDF. This datasheet also covers the IRHM8064 variant, as both devices belong to the same (irhm7064 / irhm8064) transistor n-channel family and are provided as variant models within a single manufacturer datasheet.

Features

  • s s s s s s s s Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C I D @ VGS = 12V, TC = 100°C IDM PD @ TC = 25.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHM8064_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRHM7064 N-Channel Transistor IRF
IRHM7130 Power MOSFET IRF
IRHM7150 Power MOSFET IRF
IRHM7250 Power MOSFET IRF
IRHM7260 Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHM7054 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM7130 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM7150 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM7160 Radiation Hardened Power MOSFET
IRHM7230 (IRHM7230 / IRHM8230) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

Full PDF Text Transcription

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Previous Datasheet www.datasheet4u.com Index Next Data Sheet Provisional Data Sheet No. PD-9.1564 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHM7064 IRHM8064 N-CHANNEL MEGA RAD HARD 60 Volt, 0.021Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/ Sec, and return to normal operation within a few microseconds.
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